Si Iso Etch HNO3 + H2O + NH4F Etch Silicon PFA Tank (near ambient) Oxide Etch 10:1 HF (H2O + 49% HF) Etch Silicon Dioxide PFA Tank with heat exchange coils Buffered Oxide Etch 5:1 (40% NH4F + 49% HF) Silicon Dioxide PFA Tank with heat exchange coils Quickdump Rinse H2O Chemical removal PVDF Quickdump

Buffered Oxide Etchant • FUJIFILM Buffered Oxide Etchantsare silicon oxide etchants formulated from high purity 49% Hydrofluoric Acid and high purity 40% Ammonium Fluoride. •Formulations are available in standard NH4F:HF ratios or made to customer specification. •Stringent control of both hydrofluoric acid and ammonium fluoride Summary Buffered Oxide Etch (BOE) is a mixture of HF and NH4F in different proportions. 6:1 BOE etching means that 40% NH4F: 49% HF = 6:1 (volume ratio) is mixed. HF is the main etchant and NH4F is used as a buffer. SMFL Thin Film Wet Etch Rates: These etch rates are intended as a guide. Actual etch rates will vary, please verify before use. Film: 10:1 Buffered Oxide Etch: 10:1 Buffered Oxide Etch with Surfactnat: 5.2:1 Buffered Oxide Etch: 50:1 HF: 16:3:3 Pad Etch. 40% KOH @85°C: Phosphoric Acid @165°C Buffered Oxide Etch (BOE) Etch SiO 2: Ammonium Fluoride (NH 4 F) Aqueous Hydrofluoric Acid (HF) Aqueous: 40%: 15-40°C Ambient: A Series RCe Series: CP8: Etch: Nitric Acid (HNO 3) Hydrofluoric Acid (HF) Ambient: A Series: Etch (Indium) Molybdenum Platinum Nichrome: Etch: Hydrochloric Acid (HCl) Aqueous Nitric Acid (HNO 3) 37-38% 70-71% : QA Buffered Oxide Etch Hazard Alert Code: EXTREME Chemwatch Material Safety Data Sheet Issue Date: 15-Oct-2010 CHEMWATCH 4598-82 X9317SP Version No: Page 1 of 11 Section 1 - CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME Buffered Oxide Etch SYNONYMS "Aqueous NH4-HF Etchant Solutions", "etching compound" PROPER SHIPPING NAME The oxEtch-BOE is an acid wet station that is dedicated for etching silicon dioxide.The buffered oxide wet etchant (7:1, NH4F:HF) has excellent selectivity to silicon and silicon nitride.

Buffered Oxide Etch INRF Application note Process name: BOE . Overview . Buffered oxide etch is used to etch thin films of oxide or polysilicate glass (some have used it to etch cavities in glass). It is a buffered HF mixture that slows down and controls the attack rate of HF on oxide. This is a level-1 process and requires basic INRF safety

Si Iso Etch HNO3 + H2O + NH4F Etch Silicon PFA Tank (near ambient) Oxide Etch 10:1 HF (H2O + 49% HF) Etch Silicon Dioxide PFA Tank with heat exchange coils Buffered Oxide Etch 5:1 (40% NH4F + 49% HF) Silicon Dioxide PFA Tank with heat exchange coils Quickdump Rinse H2O Chemical removal PVDF Quickdump

SMFL Thin Film Wet Etch Rates: These etch rates are intended as a guide. Actual etch rates will vary, please verify before use. Film: 10:1 Buffered Oxide Etch: 10:1 Buffered Oxide Etch with Surfactnat: 5.2:1 Buffered Oxide Etch: 50:1 HF: 16:3:3 Pad Etch. 40% KOH @85°C: Phosphoric Acid @165°C

AIPAD Etch 639. BUFFERED OXIDE ETCHANTS (BOE) 800Å/min @ 25 °C Thermally Grown. Variable. 90 Å/min @ 25 °C. 4000 Å/min @ 22 °C. 5000 Å/min. Variable: PKP-308PI HARE SQ (SU-8) Semiconductor & Integrated Circuits. PSG/BSG. CVD. CVD, Al Compatible. Al Compatible: SiO: SILICON MONOXIDE ETCH: 5000 Å/min @ 85 °C PKP-308PI HARE SQ (SU-8 Feb 02, 2014 · Buffered hydrofluoric acid (BHF) (or diluted HF) is commonly used for oxide etching [42–45]. In the following sections, the study of oxide etching in 1 to 5 wt% HF and the buffered hydrofluoric acid (BHF) solutions is presented. Moreover, the etch rate in diluted HF is also employed for the evaluation of the quality of SiO 2 film . Recipe for 6:1 Buffered Oxide Etch (BOE) with Surfactant . Chemicals Required: · 100 g Ammonium Fluoride (NH 4 F) · 150 ml DI Water · 25 ml 49% Hydrofluoric Acid (HF) · 100 m l 0.1% Triton . Safety Preparation: